Self-organized superlattice formation in II-VI and III-V semiconductors

There is extensive recent experimental evidence of spontaneous superlattice ~SL! formation in various II–VI and III–V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb.


More publications
I. Daruka, A.-L. Barabási

Physical Review Letters 78, 3027 (1997)

Z. Neda, E. Ravasz, Y. Brechet, T. Vicsek, A.-L. Barabási

Nature 403, 849-850 (2000)

A. Czirok, A.-L. Barabási, T. Vicsek

Physical Review Letters 82, 209–212 (1999)