Dynamic scaling in conserved systems with coupled fields: application to surfactant-mediated growth

We present an analytical study of the interaction of two nonequilibrium conservative fields. Due to the conservative character of the relaxation mechanism, the scaling exponents can be obtained exactly using dynamic renormalization group. We apply our results to surfactant-mediated growth of semiconductors. We find that the coupling between the surfactant thickness and the interface height cannot account for the experimentally observed layered growth, implying that reduced diffusion of the embedded atoms is a key mechanism in surfactant-mediated growth.


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